| ‘lllvVISHAYQV www.Vishay.com RATINGS AND cHARAcTERIsTIcs cunvEs(TA = 25 0C unless otherwise noted) EEES0 '9 11E 2 LE T‘o -C‘ 2 TM Measureu at the Cathode Band Terminal 0 25 50 75 100 125 150 175 TM - Mount Temperature (“Cl Fig. 1 — Maximum Forward Current Derating Curve WW3F13o0.a101Ea1><( 0 0.4 0.0 1.2 1.6 20 2.4 20 3.2 3.6 Average Forward Current (A) Fig. 2 - Average Power Loss Characteristics 10 instantaneous Forward Current (A) on0.4 0.8 ‘.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8 Instantaneous Fonlvard Voltage (V) Fig. 3 - Typical Instantaneous FonNard Characteristics Revision: 09?Sep-13 AU3PK, AU3PM Vishay General Semiconductor 10 000 § 1 :10n0 1 E R 9-) % 3 O ‘U0 ? 4-====.___ g -- I----------- I--- 3 10 I 2.... 3 1 2 g I 22 2: .___.___ g I------- $ 0.1 ‘.5 E:1 :1O‘20 30 90 100 Percent 0' Rated Peak Reverse Voltage (%):11Fig. 4 - Typical Reverse Leakage Characteristics 5o <2 <1):1 \tamc Junction Capacitance (pF) Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance 10 Transient Thermal impedance (“C/W) 100|||| 1 A IIIIIIIIII||||||III||||||III||| 0 l l 1 D 0.01 t- Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Document N umber: 89339 For technical questions within your region: DiodesArnericas@vishay.c0m, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT To CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.visnay.com/doc?91000 |